بررسی اثرات دما بر مدارات الکترونیکی
- رشته تحصیلی
- مهندسی برق-الکترونیک-مدار وسیستم
- مقطع تحصیلی
- کارشناسی ارشد
- محل دفاع
- کتابخانه دانشکده برق و کامپیوتر شماره ثبت: E1515;کتابخانه مرکزی -تالار اطلاع رسانی شماره ثبت: 40249;کتابخانه مرکزی پردیس 2 فنی شماره ثبت: E 1515
- تاریخ دفاع
- ۲۹ بهمن ۱۳۸۷
- دانشجو
- سمانه سلیمانی امیری
- استاد راهنما
- بهجت فروزنده, علی افضلی کوشا
- چکیده
- با پیشرفت تکنولوژی به سمت ابعاد بسیار کوچک و در محدوده نانومتر رفتارهای نامطلوبی مانند افزایش چگالی توان توان نشتی و تغییرات درجه حرارت در سطح تراشه باعث شده است که تاثیرات دما به عنوان یکی از اصلی ترین مشکلات در تکنولوژی های جدید مطرح شود.
- Abstract
- As technology moves into deep submicron and nanoscale era, undesirable trends such as increasing power density, leakage power, and temperature variation within chips have made thermal effects emerge as a major bottleneck in further technology scaling. Thermal effect is no longer considered as just a reliability issue, but it also has become a fundamentally important and comprehensive problem that includes timing and power issues as well. Therefore, thermal effects have to be an integral part of design and analysis of VLSI circuits and microarchitecture in nanoscale technologies. In this thesis, the effects of temperature variations on the performance of MOSFET, FinFET and CNFET devices and logic gates are investigated and some techniques to reduce these effects are presented. The importance of temperature variation effects in sub-threshold logics is considered and different techniques for compensating these effects are compared. For the last part of our research, the effects of temperature variations on the stability of sub-threshold SRAM cells are investigated and new cells with less temperature sensitivity and better stability are proposed